1. Product Science and Structural Honesty
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms arranged in a tetrahedral lattice, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting extraordinary atomic bond toughness.
The Si– C bond, with a bond energy of about 318 kJ/mol, is amongst the toughest in architectural porcelains, providing impressive thermal security, hardness, and resistance to chemical strike.
This durable covalent network leads to a material with a melting point going beyond 2700 ° C(sublimes), making it one of one of the most refractory non-oxide porcelains offered for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC maintains mechanical toughness and creep resistance at temperatures over 1400 ° C, where numerous steels and conventional porcelains start to soften or degrade.
Its reduced coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for rapid thermal biking without catastrophic fracturing, a vital feature for crucible efficiency.
These inherent homes come from the balanced electronegativity and comparable atomic sizes of silicon and carbon, which advertise a highly steady and densely loaded crystal framework.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are typically produced from sintered or reaction-bonded SiC powders, with microstructure playing a definitive duty in toughness and thermal shock resistance.
Sintered SiC crucibles are created with solid-state or liquid-phase sintering at temperature levels above 2000 ° C, frequently with boron or carbon ingredients to enhance densification and grain boundary communication.
This process produces a fully dense, fine-grained framework with minimal porosity (
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