Silicon Carbide Ceramic Plates: High-Temperature Structural Materials with Exceptional Thermal, Mechanical, and Environmental Stability aluminum nitride substrate

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1. Crystallography and Product Principles of Silicon Carbide

1.1 Polymorphism and Atomic Bonding in SiC

Silicon Carbide Ceramic Plates: High-Temperature Structural Materials with Exceptional Thermal, Mechanical, and Environmental Stability aluminum nitride substrate插图

(Silicon Carbide Ceramic Plates)

Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric ratio, identified by its amazing polymorphism– over 250 known polytypes– all sharing strong directional covalent bonds but differing in piling sequences of Si-C bilayers.

The most highly pertinent polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal kinds 4H-SiC and 6H-SiC, each showing refined variants in bandgap, electron movement, and thermal conductivity that influence their viability for specific applications.

The stamina of the Si– C bond, with a bond power of about 318 kJ/mol, underpins SiC’s remarkable firmness (Mohs hardness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical destruction and thermal shock.

In ceramic plates, the polytype is typically chosen based upon the intended usage: 6H-SiC prevails in structural applications as a result of its convenience of synthesis, while 4H-SiC dominates in high-power electronics for its superior fee carrier wheelchair.

The vast bandgap (2.9– 3.3 eV depending on polytype) additionally makes SiC an excellent electrical insulator in its pure type, though it can be doped to work as a semiconductor in specialized digital devices.

1.2 Microstructure and Stage Purity in Ceramic Plates

The efficiency of silicon carbide ceramic plates is critically dependent on microstructural attributes such as grain dimension, density, phase homogeneity, and the visibility of secondary phases or pollutants.

Premium plates are generally fabricated from submicron or nanoscale SiC powders with sophisticated sintering methods, causing fine-grained, fully thick microstructures that take full advantage of mechanical toughness and thermal conductivity.

Pollutants such as cost-free carbon, silica (SiO ₂), or sintering help like boron or light weight aluminum have to be thoroughly controlled, as they can form intergranular movies that reduce high-temperature stamina and oxidation resistance.

Residual porosity, also at low degrees (

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